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 PD20015C
RF power transistor, LdmoST family
Features

Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V BeO free package ESD protection In compliance with the 2002/95/EC european directive
M243 Epoxy sealed
Description
The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology. PD20015C's superior linearity performance makes it an ideal solution for mobile application. 2 1. Drain 2. Gate 3. Source Figure 1. Pin connection
1
3
April 2009
Doc ID 14136 Rev 2
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www.st.com 9
Contents
PD20015C
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 2.3 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 4 5
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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Doc ID 14136 Rev 2
PD20015C
Electrical data
1
1.1
Electrical data
Maximum ratings
TCASE = 25 C Table 2.
Symbol V(BR)DSS VGS ID PDISS TJ TSTG
Absolute maximum ratings
Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 C) Max. operating junction temperature Storage temperature Value 40 - 0.5 to 15 7 93 200 -65 to +150 Unit V V A W C C
1.2
Thermal data
Table 3.
Symbol RthJC
Thermal data
Parameter Junction - case thermal resistance Value 1.4 Unit C/W
Doc ID 14136 Rev 2
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Electrical characteristics
PD20015C
2
Electrical characteristics
TCASE = +25 C
2.1
Static
Table 4.
Symbol IDSS IGSS VGS(Q) VDS(ON) CISS COSS CRSS VGS = 0 V VGS = 5 V VDS = 10 V VGS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V
Static
Test conditions VDS = 25 V VDS = 0 V ID = 350 mA ID = 1 A VDS = 12.5 V VDS = 12.5 V VDS = 12.5 V f = 1 MHz f = 1 MHz f = 1 MHz Min. 4.2 270 49 35 1.0 310 Typ. Max. 1 1 Unit A A V mV pF pF pF
2.2
Dynamic
Table 5.
Symbol P3dB GP hD
Dynamic
Test conditions VDD = 13.6 V, IDQ = 350 mA f = 2 GHz 10 45 20:1 Min. Typ. 23 11 53 Max. Unit W dB % VSWR
VDD = 13.6 V, IDQ = 350 mA, POUT = 15 W, f = 2 GHz VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 2 GHz
Load VDD = 15.5 V, IDQ = 350 mA, POUT = 20 W, f = 2 GHz mismatch All phase angles
2.3
ESD protection characteristics
Table 6. ESD protection characteristics
Test conditions Human body model Machine model Class 2 M3
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Doc ID 14136 Rev 2
PD20015C
Typical performance
3
Figure 2.
120
Typical performance
Capacitances vs drain voltage
Crss
100
Figure 3.
6
DC output characteristics
p
Coss
Ciss
5
Tamb = - 40 C
Capacitance (pF)
80
ID[A]
4
Freq = 1 MHz
60
3
40
2
20
1
0
0 0 10 20 30 40 50
0
2
4
6 VDS[V]
8
10
12
Vds (V)
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 5.5V
Vgs = 6.0V
Figure 4.
6
DC output characteristics
Figure 5.
6
DC output characteristic
Tamb = + 20 C 5
Tamb = + 60 C
5
4
4
ID[A]
3
ID[A]
0 2
Vgs = 4.0V
3
2
2
1
1
0 4
Vgs = 4.5V
6 VDS[V]
Vgs = 5.0V
8
10
Vgs = 5.5V
12
Vgs = 6.0V
0 0
Vgs = 4.0V
2
4
Vgs = 4.5V
6 VDS[V]
Vgs = 5.0V
8
Vgs = 5.5V
10
12
Vgs = 6.0V
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Typical performance Figure 6. Gain and efficiency vs Pout
12 11 10 90 80 70 60 50 40
PD20015C
Gain (db)
9 8 7 6 5 4 3 0 Gain 5 Eff 10 15 20 25 30
Freq = 2 GHz Vdd = 13.6V Idq = 350mA
30 20 10 0
Pout (W )
Figure 7.
Gain and efficiency vs Pout
12 11 10 9 8 7 6 5 4 3 0
Gain Eff Freq = 2 GHz Vdd = 12V Idq = 350mA
90 80 70 60 50 40 30 20 10 0 5 10 15 20 25
Gain (db)
Pout (W)
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Doc ID 14136 Rev 2
Nd (%)
Nd (%)
PD20015C
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 7.
Dim. Min. A B C D E F G H I J 20.07 8.89 0.10 3.18 1.83 1.27 5.21 5.46 5.59 14.27 20.57 9.40 0.15 4.45 2.24 1.78 0.790 0.350 0.004 0.125 0.072 0.050
M243 (0.230 x 0.360 2L N/HERM W/FLG) mechanical data
mm. Typ. Max. 5.72 6.48 6.10 Min. 0.205 0.215 0.220 0.562 0.810 0.370 0.006 0.175 0.088 0.070 Inch Typ. Max. 0.225 0.255 0.240
Figure 8.
Package dimensions
Controlling dimension: Inches
1022142E
Doc ID 14136 Rev 2
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Revision history
PD20015C
5
Revision history
Table 8.
Date 16-Nov-2007 14-Apr-2009
Document revision history
Revision 1 2 Initial release. Updated Table 4 on page 4 Changes
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Doc ID 14136 Rev 2
PD20015C
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Doc ID 14136 Rev 2
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